| 摘要 |
PURPOSE: To realize an optoelectronic group III-V or II-IV semiconductor device, including a thin film having appropriate optical characteristic by lowering the interface level density in the center of a band gap. CONSTITUTION: Ga2 O3 is deposited on the surface of a semiconductor by electron beam deposition using a high purity single crystal Gd3 Ga5 O12 source, while sustaining the semiconductor surface at a temperature of 40-370 deg.C under background pressure of 1×10<-10> Torr or above. A device 10 is a ridge waveguide quantum-well laser and a coating 12 on the mirror surface of a semiconductor laser substrate 11 is an antireflection (AR) film having thickness of about λ/4 or odd number times thereof, wherein λ is the wavelength of radiated light and n is the refractive index of the coating. Furthermore, a high reflectance(HR) coating 13 of an appropriate material, e.g. an alternating layer of Si and Ga2 O3 , is applied onto the other surface. A high power laser beam can be emitted from the AR coated surface, as compared with a uncoated surface because of these two coatings. |
