发明名称 DEPLETION TRANSISTOR TYPE DELAYED CIRCUIT
摘要 a PMOS transistor which has an input signal applied to the gate thereof and has a power supply voltage connected to the source thereof; a first depletion transistor which is connected to a drain of the PMOS transistor to the drain therof and has the gate and source connected to each other; a second depletion transistor which is connected to the gate and source of the first depletion transistor to the drain therof and has the gate and source connected to each other; and an NMOS transistor which is connected to the gate and source of the second depletion transistor to the drain therof, has the input signal applied to the gate thereof and has a ground potential connected to the source thereof.
申请公布号 KR950012709(B1) 申请公布日期 1995.10.20
申请号 KR19920027379 申请日期 1992.12.31
申请人 HYUNDAI ELECTRONICS CO., LTD. 发明人 CHOE, YONG - JUNG
分类号 H03K5/00;(IPC1-7):H03K5/00 主分类号 H03K5/00
代理机构 代理人
主权项
地址