| 摘要 |
PURPOSE:To provide a pin diode having a soft-recovery characteristic, by reducing the peak value IRP of its backward current in the case of its reverse recovery especially, and by reducing di/dt in its T2 term without the lengthening of its reverse-recovery time Trr. CONSTITUTION:In a diode comprising a p-type region 4 of a high impurity concentration, an n-type region 1 of a high impurity concentration and a region 2 of a low impurity concentration which is interposed between the regions 1, 4, at least one region 3 of a high impurity concentration which has the identical conduction type with the region 2 is so provided in the region 2 of a low impurity concentration that a p-n junction J is made adjacent to the region 3 of a high impurity concentration which is present in the region 2 of a low impurity concentration.
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