PRODUCTION FOR SEMICONDUCTOR SUBSTRATE AND PRODUCTION DEVICE THEREFOR

摘要

PURPOSE:To form polycrystal semiconductor films having high quality. CONSTITUTION:Since the poly crystalization of an amorphous silicon film area 3 is performed by executing heat treatment while moving a heating part performing partly heating in the direction of the area 3 with respect to a substrate on which amorphous semiconductor films are deposited on an insulating substrate 1 or moving the substrate on which amorphous semiconductor films are deposited with respect to the heating part, grains are grown and controlled uniformly in the moving direction of a heating area 2 by making grains polycrystalized by a heating light in a semiconductor part being adjacent to the heating area 2 seed grains.