METHOD AND APPARATUS FOR GROWING OF MONOCRYSTALS FROM HIGH-MELTING POINT MATERIALS,申请号SU19915019760-传众专利搜索

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发明名称	METHOD AND APPARATUS FOR GROWING OF MONOCRYSTALS FROM HIGH-MELTING POINT MATERIALS
摘要
申请公布号	RU2046159(C1)	申请公布日期	1995.10.20
申请号	SU19915019760	申请日期	1991.12.27
申请人	LINGART YURIJ K	发明人	LINGART YURIJ K
分类号	C30B11/00;C30B29/22;(IPC1-7):C30B11/00	主分类号	C30B11/00
代理机构		代理人
主权项
地址

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