| 摘要 |
PURPOSE:To surely store data in a manner not to volatilize by efficiently injecting and pulling out electrons to a floating gate and changing a threshold voltage in a nonvolatile SRAM cell utilizing a floating gate-type transistor. CONSTITUTION:A nonvolatile memory cell MC includes floating gate-type transistors 1a, 1b set between source nodes 4a, 4b and memory nodes A, B and, flip-flops 2a, 2b for holding a signal potential of the memory nodes. A drain of each floating date-type transistor is connected to the source node, and a control gate is connected to a control electrode node 5. Different voltages are impressed to the drain and the control gate of the floating gate-type transistor, thereby efficiently generating and accelerating a large quantity of hot electrons by an avalanche breakdown. The hot electrons are thus injected into the floating gates. The electrons are pulled out, by the voltages applied to the control gate and tone drain. |
