| 摘要 |
A method for making inverted-type thin-film field effect transistors, and transistors thereby obtained, are disclosed. The method is characterised in that it comprises a step of oxidising the n+ doped semiconductor film between the source and the drain. An improvement whereby a parasite transistor is eliminated and wherein the transistor gate consists of a line-connected segment arranged parallel to the line for covering the pixel electrode and column is also disclosed. The method is useful for all kinds of inverted-type field effect thin-film transistors, e.g. photodiode arrays, and particularly for those used in active matrices for liquid crystal screens controlled by peripheral electronic circuits that are external and/or integrated (integrated drivers) into the substrate of the active matrix. |
