| 摘要 |
<p>Hybrid semiconductor components, particularly linear infrared sensors produced by hybridisation, are disclosed. A component of this kind includes a main substrate (30) incorporating active elements (31) that cannot be provided on a silicon substrate. The substrate may be made of AsGa, InP, HgCdTe or PbTe. A plurality of silicon chips (50-55) are mounted on the main substrate by means of hybridisation using indium balls. The chips comprise readout and multiplexing circuits and have a limited size (i.e. a few millimetres) so that differential thermal expansion stresses are limited, while the sensing bar itself may be made in a single piece with no end-to-end joint. Bars with an extended length (several centimetres) and high resolution (at least a thousand points) may thus be produced.</p> |
