SEMICONDUCTEUR STRAIN-MEASURING CONVERTER

摘要

The proposed semiconductor strain-measuring converter is based on a silicon crystal in the form of an n-type conducting chip (1), the primary working surface (2) of which is provided with p-type strain resistors (3, 4, 5, 6) electrically connected into a bridge circuit and configured in pairs above zones of parallel depressions (9, 10) which extend across the entire width of the chip (1) on the side of its second (11) surface opposite the first working surface. Pairs of strain resistors (3, 4; 5, 6) are mounted above the area of each depression (9, 10), the strain resistors being associated with opposing limbs of the bridge circuit, and all the strain resistors (3, 4, 5, 6) are configured parallel to each other.