Verfahren zur Bildung eines Materialmusters auf einer Hauptoberfläche eines verzogenen Substrats

摘要

A method of manufacturing a semiconductor device including a semiconductor substrate (10) comprising n-emitter regions (14a-14c) formed before the substrate is brazed on a molybdenum plate (1). Due to the difference between respective thermal expansion coefficients of silicon and molybdenum, the substrate is warped through the brazing process and the horizontal positions of the n-emitter regions are shifted. A mask pattern for patterning an aluminum layer (31) is corrected in position to prevent a patterned aluminum layer from extending over the peripheral areas of the n-emitter regions.