发明名称 NOR TYPE MASK ROM AND MANUFACTURING METHOD THEREOF
摘要 a plurality of memory cells arranged in an array manner and connected to a word line and a bit line, respectively; a plurality of first transistors respectively connected to the word line and being in a conductive state according to a word line charging signal, for flowing an electric current to the memory cell selected from a power supply voltage terminal; a plurality of second transistors respectively connected to the bit line and turned on/off according to a chip enable signal; a plurality of third transistors respectively connected to the second transistors and turned on/off according to a bit line charging signal; and a sense amplifier for inputting an output signal of a connection node of the second transistors with the third transistors to compare the input signal with a reference voltage, to read the selected memory cell, wherein each of the memory cells are combined with a resistor and a capacitor.
申请公布号 KR950012549(B1) 申请公布日期 1995.10.18
申请号 KR19920009390 申请日期 1992.05.30
申请人 HYUNDAI ELECTRONICS INDUSTRY CO., LTD. 发明人 KIM, JONG - OH;CHOE, IL - HYON
分类号 H01L27/112;(IPC1-7):H01L27/112 主分类号 H01L27/112
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