发明名称 |
STRUCTURE OF WORDLINE AND MANUFACTURING METHOD THEREOF |
摘要 |
a polycrystal silicon layer; a metal layer comprising first and second metal layers which are insulated each other, the first and second metal layers in turn positioned in different layers. The polycrystal silicon layer and the first metal layer are connected through a first contact hole, and the first metal layer and the second metal layer are connected through a second contact hole.
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申请公布号 |
KR950012553(B1) |
申请公布日期 |
1995.10.18 |
申请号 |
KR19920010608 |
申请日期 |
1992.06.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JUN - ON;LEE, TAE - HYONG;KANG, SANG - SOK;LEE, JON - HYONG |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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