发明名称 METHOD OF FORMING CONTACT HOLE BY DOUBLE SELECTIVE EXPOSURE OF PHOTOMASK
摘要 forming an insulation film on a semiconductor substrate, coating a photosensitive film on the insulation film, placing a double pattern mask on the film to execute a double select exposure; removing the photosensitive film exposed from a transparent film and a semi-transparent film of the double pattern mask; and dry-etching the photosensitive film exposed by the semi-transparent film and the insulation film exposed by the transparent film.
申请公布号 KR950012542(B1) 申请公布日期 1995.10.18
申请号 KR19930004449 申请日期 1993.03.22
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 PARK, DAE - IL;PARK, SANG - HUN
分类号 G03F7/00;(IPC1-7):G03F7/00 主分类号 G03F7/00
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