STRUCTURE OF DRAM CELL AND MANUFACTURING METHOD THEREOF

摘要

first and second insulation films which are stacked on a semiconductor substrate; a capacitor made of a storage node polysilicon, a dielectric, and a plate polysilicon which is formed in a vertical direction on the first and second insulation films; a transistor forming a gate and a junction which is formed between the first and second insulation films; and a bit line which is connected to the junction disposed between the gates.