METHOD OF MANUFACTURING A MASK ROM

摘要

forming a word line comprising n+ active area, a gate oxidizing film and a polysilicon on a silicon substrate, forming a nitriding film on the word line, and forming an oxide film spacer; vacuum-evaporating a polysilicon code layer to connect the n+ active area and the nitriding film to form a depletion transistor; and sequentially vacuum-evaporating an insulating film and a metal bit line, etching the polysilicon code layer formed on the gate of a transistor to be desired to make an enhancement transistor and opening a source and a drain of the transistor.