发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING A MICRO CUP
摘要 a conduction layer of a first electrode formed in a limited area on a substrate; a dielectric layer formed on the first electrode; and a second electrode formed on the dielectric layer, wherein the conduction layer includes a plurality of micro-caps on the surface thereof. The conduction layer is a polycrystal silicon layer and each of the micro-cap is an epitaxial layer.
申请公布号 KR950012556(B1) 申请公布日期 1995.10.18
申请号 KR19920007620 申请日期 1992.05.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, YONG - U;CHOE, KI - YONG
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
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