发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING A MICRO CUP |
摘要 |
a conduction layer of a first electrode formed in a limited area on a substrate; a dielectric layer formed on the first electrode; and a second electrode formed on the dielectric layer, wherein the conduction layer includes a plurality of micro-caps on the surface thereof. The conduction layer is a polycrystal silicon layer and each of the micro-cap is an epitaxial layer.
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申请公布号 |
KR950012556(B1) |
申请公布日期 |
1995.10.18 |
申请号 |
KR19920007620 |
申请日期 |
1992.05.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, YONG - U;CHOE, KI - YONG |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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