| 摘要 |
The device has a N-type substrate layer (S) of low doping level which contains the protective components. A supplementary P-type (P3) region is connected to a test terminal (11) which is connected by a current detector to sources of voltage. The voltage sources may be greater or less than the basic N or P type material voltages. The protective component may be a bi-directional Shockley diode, with P-type (P1,P2) regions and with complementary projecting N-type regions (N1,N2). These may be formed in the outer substrate opposite conductivity (P type) faces. <IMAGE> |
