| 摘要 |
<p>A memory module comprises first, second, third and fourth discrete memory devices, each memory device including four equal storage capacity arrays of dynamic memory cells. Each array has a row address strobe terminal and a column address strobe terminal and is connected with a different separate data lead for random access writing and reading, namely a lead for applying a row address strobe signal to the row address strobe terminal of the first, second, third and fourth discrete memory devices, a lead for applying a first column address strobe signal to the column address strobe terminals of the first and second discrete memory devices and a lead for applying a second address strobe signal to the column address strobe terminals of the third and fourth discrete memory devices. A fifth discrete memory device includes at least first and second dynamic cell arrays, each of the first and second dynamic cell arrays having the equal storage capacity, a row address strobe terminal receiving the row address strobe signal, and a different separate data lead. The first dynamic cell array includes the column address strobe terminal for receiving the first column address strobe signal, and the second dynamic cell array includes a column address strobe terminal for receiving the second column address strobe signal.</p> |
