发明名称 Magnetron sputtering cathode apparatus
摘要 A magnetron sputtering cathode apparatus has a single magnetron cathode including a magnet assembly in which first and second types of rectangular magnet units whose N and S poles are opposite are alternately disposed adjacent to each other. Two types of loop loci in which drift electron motions are directed in opposite directions are alternately formed adjacent to each other by the first and second magnet units on the surface of the target. The two types of magnet units are disposed so that a substantially common ion current generation region is formed by the first and second magnet units, thereby hybridizing drift electron orbits adjacent to each other. In a plurality of rectangular magnet units, the strength of a magnetic field formed by a central magnet and a long side portion of a peripheral magnet of the outermost magnet unit where there is no adjacent magnetic pole of opposite polarity is set to be weak so as to be equal to the strength of a magnetic field of the central magnet and a long side portion where there is an adjacent magnetic pole of opposite polarity. In a magnetic field formed by the long side portion of the peripheral magnet of the magnet unit and a long side portion of a peripheral unit adjacent to the magnet unit, the strength at an end portion of the magnetic field region is set to be weak so as to be equal to the strength of the magnetic field at other portions of the magnetic field region.
申请公布号 US5458759(A) 申请公布日期 1995.10.17
申请号 US19940223637 申请日期 1994.04.06
申请人 ANELVA CORPORATION 发明人 HOSOKAWA, NAOKICHI;KOBAYASHI, TSUKASA
分类号 C23C14/35;H01J37/34;(IPC1-7):C23C14/35 主分类号 C23C14/35
代理机构 代理人
主权项
地址
您可能感兴趣的专利