| 摘要 |
PURPOSE:To rapidly raise the temp. of the body to be treated such as a semicon ductor wafer to a prescribed temp., furthermore executing heat treatment at a stable temp. and therefore subjecting the wafer to uniform heat treatment at the time of executing oxidizing treatment and diffusing treatment thereto. CONSTITUTION:A heat controlling sheet 3 provided in the upper direction of a reaction tube 1 is heated by a heating means 22 to form a primary heating area in which temp. is substantially uniform to the change of the position of the height on the upper part of the reaction tube and a secondary heating area in which temp. is mildly decreased as it proceeds to the lower direction. After the temp. of a wafer W is rapidly increased to the primary heating area, it is mildly decreased within the secondary heating area, and in the meantime, heat treatment is executed. |
