| 摘要 |
The present invention provides for a method for manufacturing a field emitter array comprising the steps of depositing a silicon nitride mask pattern layer on the silicon substrate, forming a porous silicon layer in the substrate except in parts under the nitride mask patterns and oxidizing the porous silicon layer and the silicon substrate under the silicon layer, which results in formation of cone shape cathode tips. Further, gates corresponding to said cathode tips are provided by the conventional process or by process of depositing thin metal film and photoresist on the mask patterns and the porous silicon layer, etching the photoresist layer on the patterns, and then etching the metal film on the patterns, or by lift-off process.
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