| 摘要 |
A memory circuit, in which test data are compared with stored data, comprises a plurality of memory cells each having two complementary data outputs indicative of a respective stored bit of the stored data. The two complementary outputs are selectively interchanged, in response to a respective test bit of the test data. An output signal is then generated (e.g. by a sense amplifier) in response to the relative polarities of the two complementary data outputs. The output signal is indicative of whether the stored bit is equal to the test bit. Where a multi-bit word is stored in a plurality of the memory cells, the output signals generated by a comparison of each stored bit of the multi-bit word and respective bits of the test data are combined by, for example, an AND gate. The output of the AND gate indicates whether the test data matches the stored multi-bit word.
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