发明名称 |
Semiconductor memory device having memory cells with enhanced capacitor capacity |
摘要 |
A semiconductor memory device includes a dielectric layer formed on a conductive thin film layer constituting a shield electrode for effecting element separation in a field area, the dielectric layer connected to a dielectric layer of a capacitor with a lower electrode having part thereof opposite to part of the shield electrode through the dielectric layer, and has an increase in electrode area of a memory cell to be able to attain the high level of integration.
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申请公布号 |
US5459685(A) |
申请公布日期 |
1995.10.17 |
申请号 |
US19940218947 |
申请日期 |
1994.03.29 |
申请人 |
NIPPON STEEL CORPORATION |
发明人 |
ANZAI, KENJI;WADA, TOSHIO |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01G4/06;H01L29/78 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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