发明名称 |
LASER BEAM ANNEALING DEVICE |
摘要 |
PURPOSE:To restrain the unevenness at a joint part in the scanning range of laser beam irradiation and to shorten the time needed to recrystallization, in a laser beam annealing device for executing the recrystallization of silicon thin film by the irradiation of the laser beam. CONSTITUTION:Energy of the laser beam 2 from a laser oscillator 1 is changed with an attenuator 3 and the uniformity of the energy is improved with a homogenizer 4. After deciding the energy of the laser beam 2 through a lens system 5, the laser beam is transmitted to a beam dividing system 6 and divided into plural laser beams 2a, 2b and irradiates the silicon film 8 on a substrate 7 shifted toward two dimensions. |
申请公布号 |
JPH07266064(A) |
申请公布日期 |
1995.10.17 |
申请号 |
JP19940059585 |
申请日期 |
1994.03.29 |
申请人 |
G T C:KK |
发明人 |
MORI YUJI;MIKAMI YOSHIAKI;KUWABARA KAZUHIRO |
分类号 |
B23K26/00;B23K26/06;B23K26/067;B23K26/12;C21D1/09;C21D1/34;C22F3/00;C30B29/06;H01L21/20;H01L21/268;H01L21/336;H01L29/78;H01L29/786;H01S3/10;H01S3/225 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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