| 摘要 |
A semiconductor device and a method of making the same capable of simplifying the process of making and reducing the cost of making. In the method a first layer is formed which has a plurality of conductors at its edge portion. Thereafter, a second layer is formed on the first layer which is to be selectively etched to form a pattern. During the etching, current is detected from the conductors and the etching is stopped dependent on the current detected from the conductors. The semiconductor device includes a transparent electrode on a substrate the transparent electrode having protrusions which have a top surface. A first insulation layer exists between the protrusions. There is a color emitting layer on the top surfaces of the protrusions and the insulation layer. The method includes the steps of: forming a first layer which has a plurality of conductors at its edge portion; forming a second layer to be selectively etched on the first layer including the conductors, to form a pattern; selectively etching the second layer and detecting a current a generated from the conductors during the etching; and stopping the etching in accordance with the current detected from the conductors.
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