发明名称 |
Gate turn-off thyristor and power convertor using the same |
摘要 |
A gate turn-off thyristor having a p-emitter layer in the anode side, an n-base layer, a p-base layer and an n-emitter layer in the cathode side. The n-base layer is composed of a first layer portion adjacent to the p-emitter layer, a second layer portion adjacent to the p-base layer and having a lower impurity concentration than the first layer portion, and is constituted by a structure which alters a travelling path of positive holes injected from the p-emitter layer.
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申请公布号 |
US5459338(A) |
申请公布日期 |
1995.10.17 |
申请号 |
US19930018421 |
申请日期 |
1993.02.17 |
申请人 |
HITACHI, LTD. |
发明人 |
TAKAYANAGI, YUJI;MURAKAMI, SUSUMU;SATOU, YUKIMASA;MATSUYOSHI, SATOSHI;MOCHIZUKI, YASUHIRO;ONOSE, HIDEKATSU |
分类号 |
H01L29/10;H01L29/744;(IPC1-7):H01L29/68;H01L29/72;H01L29/76 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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