| 摘要 |
The ferroelectric material may be lead lanthanum zirconium titanate, PLZT, crushed to about 1 to 100 micrometres and the binder may be perspex dissolved in chloroform. The ferroelectric layer (FE) may be applied the conducting layer (RE) by rolling or plastering or by immersing the conducting layer in the ferroelectric material. The covering electrode (GE) comprises a grid, bands or holes. It is formed by vapour deposition across masks or by printing or silk-screen printing. Above this electrode is an anode (ZE), separated by a space containing a vacuum, gas or plasma. The conducting material may be made tubular allowing for ferroelectric deposition on both sides. |
