| 摘要 |
PURPOSE:To realize a high-reliability and high-accuracy insulated-gate semiconductor device provided with a built-in protective circuit of a structure, wherein an overcurrent is detected with high accuracy and the protective circuit is made to conduct a protective operation reliably without causing a malfunction and a time lag. CONSTITUTION:A semiconductor base body is divided into main IGBT regions 1 and a protective circuit region 2, P-type well layers 20, which respectively come into contact with emitter electrodes, are provided between the regions 1 and the region 2 as intercepting regions and a detection IGBT region 30 and a protective circuit element are both formed on the region 2. Accordingly, as excessive carriers, which flow in the region 2 from the regions 1, can be eliminated through the layers 20, a high-reliability and high-accuracy insulated- gate semiconductor device having a built-in protective circuit of a structure, wherein an overcurrent is detected with high accuracy and the protective circuit is actuated without causing a malfunction and a time lag, can be realized. |
