| 摘要 |
PURPOSE:To provide a method of forming a gate oxide film and a capacitance insulating film of high reliability which can be applied to an ultra LSI like a 256MDRAM, and its manufacturing equipment. CONSTITUTION:A field oxide film is formed on an Si substrate 1, and an oxide film or the like on the surface is eliminated by treatment using HF solution. A natural oxide film is eliminated by HF gas treatment. After F on the surface of the substrate is eliminated by H2 gas treatment, a gate oxide film is formed by oxidizing the substrate. |
