| 摘要 |
<p>PURPOSE: To provide a nonvolatile semiconductor memory device enabling execution of a program operation and an erasing operation with a low voltage, and an operating method therefor. CONSTITUTION: A nonvolatile semiconductor memory device, wherein a plurality of a blocks B each comprising a plurality of word lines out of which word liens 13a... are made control gates, embedded diffused layers 14 and 15, a metallic wire 16 disposed at the rate of 1 to the two embedded diffused layers, memory cells 11 for which an embedded diffused layer formed between the two embedded diffused layers is made a source or a drain and block transistors 17-20, as one set, are formed and wherein the block transistors are connected to the opposite ends of the embedded diffused layers and thereby the embedded diffused layers of the blocks are connected in the shape of bellows.</p> |
