METHOD OF MANUFACTURING A CONTACT FOR VLSI DEVICE

摘要

forming a MOS transistor having a gate, source and drain electrodes and a field oxide on a silicon substrate; forming a first insulating layer on the MOS transistor and the field oxide; forming a polyimide pattern only on contact areas located on top of the source electrode and drain electrode after coating a photosensitive polyimide over the first insulating layer; forming a second insulating layer over the device, particularly on the polyimide pattern and forming a second insulating layer pattern by performing an etch back process until a surface of the polyimide pattern is exposed; removing a spacer on side walls of the gate electrode by performing a blanket etching process on the first insulating layer exposed by the plasma etching process; depositing a polysilicon layer on the second insulating layer pattern and forming several polysilicon pads in contact with the drain electrode or the source electrode by etching back process carrying until a surface of the second insulating layer pattern is exposed; depositing a third insulating layer over the device; and exposing each of the several polysilicon pads by removing a portion of the third insulating layer and depositing a conducting layer in contact with the exposed polysilicon pad.