| 摘要 |
<p>PURPOSE:To obtain a chemical amplification type resist having high resolution and high sensitivity by adding a material that generates a basic substance with the exposure for forming a pattern in the resist pattern forming process and another material that generates an acid in the post-exposure heating process to a resist composition. CONSTITUTION:This resist consisting of a base resin and a dissolution inhibitor also contains a compound that is decomposed with acid or heat to form an acid (heat-acid generating agent) and another compound that generates a basic substance with radiation-exposure (photo-base generating agent). At the time of selectively subjecting the resist film 2 to the exposure 1, the basic substance 4 is generated in the exposed part 3 of the resist in this process. In the subsequent heating process, since only the acid 6 is present in the unexposed part 2 of the resist, the decomposition of the dissolution inhibitor occurs there. On the other hand, since both the acid 6 and the basic substance 4 are present in the exposed part 3, the neutralization reaction of them with each other occurs and accordingly, no decomposition of the dissolution inhibitor occurs there. Thereafter, the resist is developed to obtain the negative resist pattern 7.</p> |
