| 摘要 |
PURPOSE:To provide a device for protecting a device element constituting the internal circuit of a semiconductor device from electrostatic discharge. CONSTITUTION:In an electrostatic discharge protector provided with a P-N-P-N structure, a current by-pass is provided by arranging a MOS field-effect transistor 14 in parallel to a P-N junction 4, which causes an electron avalanche by a reverse bias, a gate electrode 13 of this transistor 14 is connected with an input pad 1 and the P-N-P-N structure is made to operate to the function of an SCR in a low voltage by the switching action of the electrode 13 to enable a device element constituting an internal circuit of a semiconductor device to protect from an ESD breakdown. |
