| 摘要 |
PURPOSE:To form a mask in a first area on a semiconductor substrate having a two-dimensional electron gas layer to remove a part of the semiconductor substrate excluding the first area, apply crystal growth to a second semiconductor in the removed area, treat the semiconductor substrate thermally after the mask is removed, and to pile up a highly adhesive insulation film thereon so as not to damage the crystal. CONSTITUTION:After an insulation film 3 is piled up on an n-AlGaAs/GaAS modulation doping structure and a resist 4 is coated thereon, it is subject to electron beam exposure, and the resist is patterned thereafter. Reactive etching is applied thereto using the resist pattern as a mask and the insulation film 3 is subject to patterning. Then a quantum thin wire structure is formed through etching using the film 3 as a mask. Further an undoped AlGaAs 5 is grown by an MOCVD method, etc., using the film 3 as a mask for selective growth. Finally, the film 3 is removed and heat treatment is applied thereto. |
