发明名称 INNER POTENTIAL GENERATING CIRCUIT
摘要 <p>PURPOSE:To quickly boost inner power source voltage to a stable potential. CONSTITUTION:The inner potential generating circuit is provided with a depletion type MOS transister 1 and an inner potential generating circuit part 2. The depletion type MOS transister 1 received a power source voltage Vcc and outputs a boosting voltage Va based on the power source voltage Vcc until the power source voltage Vcc increases to a preset potential. The inner potential generating circuit part 2 inputs the voltage Va outputted from the depletion type MOS transister 1, generates a potential higher than the power source voltage Vcc from the potential of the voltage Va and outputs it as the inner potential Vout.</p>
申请公布号 JPH07262775(A) 申请公布日期 1995.10.13
申请号 JP19940049276 申请日期 1994.03.18
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 SATO HAJIME;NAKANISHI TOMOKO
分类号 G11C11/413;G11C11/407;G11C16/06;G11C17/00;H02M3/07;H03K19/00;(IPC1-7):G11C11/407 主分类号 G11C11/413
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