发明名称 |
INNER POTENTIAL GENERATING CIRCUIT |
摘要 |
<p>PURPOSE:To quickly boost inner power source voltage to a stable potential. CONSTITUTION:The inner potential generating circuit is provided with a depletion type MOS transister 1 and an inner potential generating circuit part 2. The depletion type MOS transister 1 received a power source voltage Vcc and outputs a boosting voltage Va based on the power source voltage Vcc until the power source voltage Vcc increases to a preset potential. The inner potential generating circuit part 2 inputs the voltage Va outputted from the depletion type MOS transister 1, generates a potential higher than the power source voltage Vcc from the potential of the voltage Va and outputs it as the inner potential Vout.</p> |
申请公布号 |
JPH07262775(A) |
申请公布日期 |
1995.10.13 |
申请号 |
JP19940049276 |
申请日期 |
1994.03.18 |
申请人 |
FUJITSU LTD;FUJITSU VLSI LTD |
发明人 |
SATO HAJIME;NAKANISHI TOMOKO |
分类号 |
G11C11/413;G11C11/407;G11C16/06;G11C17/00;H02M3/07;H03K19/00;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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