发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND DATA READING METHOD THEREOF
摘要 <p>PURPOSE:To normally read out data even when a memory cell is over-erased by detecting electric charge and using a sense amplifier. CONSTITUTION:The information in an over-erased memory cell 11 whose electric charge is discharged more than a prescribed amount by erasing operation, is detected by a detecting means 12. The detecting means 12 outputs a loading changeover signal and inputs it to a changeover means 13. On the other hand, prior to erasing operation, the changeover means 13 is reset by a resetting means 14. Thus, the ability of a sense amplifier 25 is changed over by means of the loading changeover signal. The amplifier 25 reads data out of the erased memory cell 11.</p>
申请公布号 JPH07262787(A) 申请公布日期 1995.10.13
申请号 JP19940048084 申请日期 1994.03.18
申请人 FUJITSU LTD 发明人 YAMASHITA MINORU
分类号 G11C17/00;G11C16/02;G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C17/00
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