| 摘要 |
PURPOSE:To prevent the lowering of adhesion strength of a coated insulating material by depositing the insulating material on the surface of the surface of a semiconductor substrate in which irregularities constituting a predetermined roughness are formed. CONSTITUTION:At a first step, a semiconductor substrate 1 on which an insulating material is to be deposited on is prepared. The semiconductor substrate 1 is a III-V or II-VI compound semiconductor. Next, at a second step, the predetermined irregularities 1a are formed in the surface of the semiconductor substrate 1 to increase the surface area. Next, at a third step, an insulating material 2 is deposited on the surface of the semiconductor substrate 1 in which irregularities are formed. The insulating material 2 is SiO2, SiNx, Al2O3, TiO2, MgF2 or the like. Since the surface area of the semiconductor substrate 1 with the insulating material 2 is increased by the irregularities 1a, the adhesion strength of the insulating material deposited is increased. |
