| 摘要 |
PURPOSE:To make an InGaAsP layer a quantum well layer and to provide a light modulator which is proper for 1mum band having a high modulation efficiency. CONSTITUTION:An n-type InP clad layer 2, a multiple quantum well structure having at least one quantum well layer and a p-type InP clad layer 5 are laminated on an n-type InP substrate 1 one by one. A multiple quantum well layer structure is formed by laminating In(1-x)GaxAs(1-y)Py (0<=x, y<=1) which becomes a quantum well layer 3 and In(1-z)As(1-w)Pw (0<z, w<1) which becomes a barrier layer 4 alternately. |
