| 摘要 |
PURPOSE: To always set a breakdown voltage of a voltage limiting diode low by a method, wherein the breakdown voltage of the limiting diode integrated in a semiconductor element of a free wheel diode is made smaller than that of the free wheel diode, and the two diodes are made to have anode terminals which ore separated from each other. CONSTITUTION: A voltage-limiting diode 2 is integrated in a semiconductor device of a free wheel diode. This voltage-limiting diode 2 has a smaller breakdown voltage than the one of the free wheel diode, and the two diodes have anode terminals 19 and 20 being separated from each other. Since the dielectric breakdown of the voltage-limiting diode is brought about at a lower voltage than the one of the free wheel diode, an anode layer 7 of the voltage-limiting diode is diffused deeper in a semiconductor element 5 than an anode layer 6 of the free wheel diode. |
