发明名称 |
HBT MONOLITHIC VARIABLE GAIN AMPLIFICATION CIRCUIT WITH BIAS COMPENSATION AND BUFFERING METHOD |
摘要 |
PURPOSE: To obtain high performance efficiently over a wide operation range by allowing a series feedback path to have a PIN diode which operates as a variable resistance element and receives a variable gain control signal so as to generate a variable gain. CONSTITUTION: An input voltage VIN is applied to an input terminal 12 and transmitted to the base 14 of a transistor TRQ1. The amplification gain generated by the TRQ1 is controlled with a variable control signal shown by a variable gain control voltage VGC. This variable gain control voltage VGC is generated by an electronic control unit. The variable gain control voltage VGC is transmitted through a resistance RPD and PIN diodes PD1 and PD2. Then the PIN diode PD1 operates so as to supply variable resistance according to a current IC flowing through it and effectively vary the amplifying circuit gain. The PIN diode PD2, on the other hand, effectively supplies a mirror current operating as a bias to the diode PD1. |
申请公布号 |
JPH07263976(A) |
申请公布日期 |
1995.10.13 |
申请号 |
JP19940324883 |
申请日期 |
1994.12.27 |
申请人 |
TRW INC |
发明人 |
KEBUIN DABURIYUU KOBAYASHI |
分类号 |
H03G5/16;H03F1/34;H03F1/48;H03F3/343;H03G1/00;H03G3/00 |
主分类号 |
H03G5/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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