发明名称 |
THIN FILM MATERIAL FOR FORMING DAMPING PHASE SHIFT MASK AND PREPARATION THEREOF |
摘要 |
PURPOSE: To provide a light-transmitting attenuation phase shift mask. CONSTITUTION: A phase shift layer 18 which attenuates the energy of specified wavelength is formed in a phase shift mask. This method includes a step to prepare a substrate which is transparent for specified wavelength, a step to prepare a deposition target 20 containing silicon, and a step to deposit a layer containing silicon and nitrogen on a substrate from the target 20 by using a deposition process in a gas atmosphere containing a reactive nitrogen component. |
申请公布号 |
JPH07261370(A) |
申请公布日期 |
1995.10.13 |
申请号 |
JP19950024037 |
申请日期 |
1995.02.13 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
DEREKU BURAIAN DABU;KUWAN KUO SHII |
分类号 |
C23C14/06;G03F1/00;G03F1/26;G03F1/32;G03F9/00;H01L21/027 |
主分类号 |
C23C14/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|