发明名称 THIN FILM MATERIAL FOR FORMING DAMPING PHASE SHIFT MASK AND PREPARATION THEREOF
摘要 PURPOSE: To provide a light-transmitting attenuation phase shift mask. CONSTITUTION: A phase shift layer 18 which attenuates the energy of specified wavelength is formed in a phase shift mask. This method includes a step to prepare a substrate which is transparent for specified wavelength, a step to prepare a deposition target 20 containing silicon, and a step to deposit a layer containing silicon and nitrogen on a substrate from the target 20 by using a deposition process in a gas atmosphere containing a reactive nitrogen component.
申请公布号 JPH07261370(A) 申请公布日期 1995.10.13
申请号 JP19950024037 申请日期 1995.02.13
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 DEREKU BURAIAN DABU;KUWAN KUO SHII
分类号 C23C14/06;G03F1/00;G03F1/26;G03F1/32;G03F9/00;H01L21/027 主分类号 C23C14/06
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