| 摘要 |
PURPOSE:To provide a laminated structure which is composed of III-V compound semiconductor other than nitrogen and III-nitrogen compound semiconductor and capable of being set as equal in band gap as t.he mixed crystal of III-V compound semiconductor other than nitrogen and iii-nitrogen compound semiconductor mixed at a high ratio, wherein the mixed crystal can not be obtained through a current crystal growth technique. CONSTITUTION:A laminated structure of III-V compound semiconductor is formed of III atom selected out of a III atom group, Al, Ga, and In, V atom selected out of a V atom group, P, As, and Sb, and nitrogen, wherein a first monoatomic layer where monoatomic layers of III atom and V atom are alternately laminated layer by layer and a second monoatmic layer where monoatmic layers of III atom and nitrogen atom are alternately laminated layer by layer are regularly laminated to constitute a laminated superlattice structure of III-V compound semiconductor. |
