| 摘要 |
PURPOSE:To provide a chemical amplification resist which has high resolution and with which the swelling of a pattern is inhibited from occurring by adding a crosslinking agent to a negative chemical amplification resist composition. CONSTITUTION:This resist contains a chemical amplification resist-base resin having hydrophobic groups which are severable with acid, on its side chains, a photo-acid generating agent, a crosslinking agent and a solvent. The silicon wafer 2 (undercoat layer) is subjected to spin coating with the resist 1b having such composition to form a resist layer having about 0.7mum thickness. The resist 1b on the wafer 2 is subjected to heat treatment to pre-bake it and then, further subjected to exposure to an excimer laser beam by using a stepper. After the exposure, the post-exposure baking of the resulting resist layer is performed to promote the acid-catalytic reaction and thereafter, the resist layer thus treated is developed by using an organic developer to form a resist pattern. In this resist pattern forming method, the resist contains methylated methylolmelamine as the crosslinking agent. |
