CRYSTAL MANUFACTURE METHOD

摘要

PURPOSE:To provide a crystal manufacturing method for excellently making a light-emitting element from AlGaInN crystal. CONSTITUTION:The {1-100} or {11-20} face of sapphire is used as a substrate crystal and a ZnO layer 12 is put on it and successively AlGaIn series hetero structures 13 to 17 are grown, and the ZnO layer is dissolved by an acid to separate AlGaInN heterocrystal and the herterocrystal is split. Thereby, the excellent split plane which is essential to form a Fabry-perot cavity is obtained.