发明名称 Driver circuit for field-effect-controlled power semiconductor switch
摘要 The power MOSFET (1) has its gate electrode connected (17) to a pref. integrated current limiter (14) comprising a depletion-mode FET (18) in parallel with an enhancement-mode FET (19), the source electrode being connected to the MOSFET gate by a resistor (20). The depletion-mode FET functions as a current source setting a lower speed for switching-on the MOSFET. The enhancement-mode FET conducts when the control signal (16) is set to zero, giving a higher speed for switching-off.
申请公布号 DE4429285(C1) 申请公布日期 1995.10.12
申请号 DE19944429285 申请日期 1994.08.18
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 KORONCAI, ADAM, DIPL.-ING., KLAGENFURT, AT;TIHANYI, JENOE, DR., 80689 MUENCHEN, DE;SANDER, RAINALD, DIPL.-PHYS., 81379 MUENCHEN, DE
分类号 H03K17/04;H03K17/0412;H03K17/687;(IPC1-7):H03K17/041 主分类号 H03K17/04
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