Mfr. of MOSFET having shallow source-drain

摘要

Method comprises: forming field oxide on an Si substrate; adding patterned gate insulation and gate poly Si; forming gate sidewall spacers; adding overall Ti followed by TiN; performing RTA under NH3 to form silicide at the interface between Si and Ti, including the gate, and TiON at the interface with field oxide and sidewall spacers, remaining Ti film being converted to TiN; doping ions of opposite type to the substrate into the TiN and TiSi; heat treating to form a shallow junction source/drain by diffusion of dopants; and removing all TiN and TiON, except for the TiSi.