| 摘要 |
PURPOSE:To manufacture a small-parasitic-capacity diode which has no step cut of a Schottly barrier metal by an oxidized protective film and the Schottky barrier diameter of an accurate size. CONSTITUTION:On Si substrate 4, Si3N4 is formed as large as the diameter of Schottky barrier SB and its circumference is made porous and then, heat-oxidized 2, so that the thickness and diameter of layer 2 can be controlled accurately. After Si3N4 is removed, no step on the surface is generated between substrate 4 and laer 2, so that no step cut will occur to SB metal 3. In this way, a SB diode of an accurate size with a small parasitic capacity can be obtained easily. |
