| 摘要 |
A silicon carbide LOCOS vertical MOSFET formed on a silicon carbide substrate (55) with portions of epitaxial layers (57, 59, 60) defining the various transistor electrodes (83, 85, 87), rather than defining the electrodes with implants and diffusion. Because of the low diffusion rate in silicon carbide, the LOCOS (75) operation can be performed after the doped epitaxial layers are formed. <IMAGE> |
