| 摘要 |
PURPOSE:To enable high speed switching without increasing ON voltage, by providing an anode structure wherein two kinds of semiconductor regions having the same conductivity type and the different impurity concentration are alternately arranged on an anode electrode. CONSTITUTION:An anode structure is constituted wherein a first anode region 11 and a second anode region 12 are alternately arranged on an anode electrode 8. The former is a high impurity concentration semiconductor region (P<+> region). The latter has the same conductivity as the former and is a semiconductor region (P or P<-> region) whose impurity concentration is lower than that of the former. Thereby, enabling high speed switching without increasing ON voltage. |
