| 摘要 |
PURPOSE:To obtain a thin film-made limiting current type oxygen sensor which enables the obtaining of excellent limiting current characteristic by preventing penetration of an oxygen gas. CONSTITUTION:A Pt cathode electrode 12 and an anode electrode 13 are arranged on a ZrO2-BN substrate 11 as opposed to each other at a fixed interval in a comb-shaped pattern with one inserted into the other. A ZrO2-Y2O3 14 is arranged as an oxide ion conducting film on the substrate where the cathode electrode 12 and the anode electrode 13 are formed. The ZrO2-Y2O3 film 14 is formed in a pattern having a window 15 to discharge an oxygen gas generated in the anode electrode 13 thereby enabling the checking of the oxygen gas from penetrating into the cathode electrode 12. |
